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采用中频交流磁控溅射方法,在玻璃基底上沉积Cu-In预制膜,采用固态硫化法制备获得了CuInS2(CIS)吸收层薄膜。考察了硫化时间对于CIS薄膜结构、形貌以及禁带宽度影响。通过XRD分析了薄膜结构,通过SEM以及XRF分析薄膜表面形貌以及薄膜成分,通过近红外透过曲线得出薄膜禁带宽度。结果表明,在400℃硫化10,15,20,25,30 min下均能制得单一黄铜矿相CIS薄膜,并且具有(112)面择优取向。以上各硫化时间下,均能形成均匀且晶粒大小为1μm的CIS薄膜,薄膜禁带宽度约为1.10~1.22 eV之间。
CuInS2 (CIS) absorber films were prepared by solid state vulcanization using a medium frequency AC magnetron sputtering method to deposit Cu-In prefabricated films on a glass substrate. The effects of curing time on the structure, morphology and band gap of CIS films were investigated. The structure of the film was analyzed by XRD. The film surface morphology and film composition were analyzed by SEM and XRF, and the band gap of the film was obtained by near infrared transmittance curve. The results show that a single chalcopyrite phase CIS film can be obtained at 400 ℃ for 10, 15, 20, 25 and 30 min, and has a preferred orientation of (112). Above the vulcanization time, can form uniform and the grain size of 1μm CIS film, the film forbidden band width of about 1.10 ~ 1.22 eV.