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采用直流磁控溅射方法,利用AZO陶瓷靶材(98wt%ZnO+2wt%Al_2O_3)在玻璃基体上沉积了AZO薄膜。研究衬底温度对所得薄膜的结构、光电特性及电稳定性的影响。通过XRD、分光光度计和霍尔测试仪对薄膜晶体结构和光电性能的测试发现:随着衬底温度的增加,薄膜的(002)衍射峰增强,结晶度提高,衬底温度由200℃增加到270℃时,薄膜的电阻率快速降低,当温度高于300℃时,薄膜的电阻率趋于稳定且有增加的趋势;随着衬底温度的增加,薄膜的电稳定性也有所提高,当衬底温度高于270℃时,在短时间内电阻率略有增加,随后电阻率趋于稳定;所有薄膜在可见光区的平均透过率均可达80%及以上。
AZO films were deposited on a glass substrate by AZ magnetron sputtering using AZO ceramic targets (98wt% ZnO + 2wt% Al 2 O 3). The effects of substrate temperature on the structure, photoelectric properties and electrical stability of the resulting films were investigated. The results of XRD, spectrophotometer and Hall test showed that the (002) diffraction peak of the film increased with the increase of substrate temperature, the crystallinity increased and the substrate temperature increased from 200 ℃ When the temperature is higher than 300 ℃, the resistivity of the films tends to be stable and increases. With the increase of the substrate temperature, the electrical stability of the films also increases, When the substrate temperature is higher than 270 ℃, the resistivity increases slightly in a short period of time, then the resistivity tends to be stable. The average transmittance of all films in the visible region can reach 80% and above.