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采用真空电子束蒸发技术及后续热氧化技术,在玻璃基底上制备了不同厚度的金属铜薄膜。采用X射线衍射、X射线光电子能谱分别表征了所制备的金属铜薄膜的晶体结构和元素组成。采用紫外-可见-近红外分光光度计及拉曼光谱仪分别分析了所制备的金属铜薄膜的吸收谱和表面增强拉曼光谱(SERS)活性。随着膜厚的增加,退火后的薄膜样品由非晶态转变为(111)面择优生长的多晶态,且其吸收边发生红移。当退火温度为200℃、退火时间为60min时,能够获得单一相的纳米氧化亚铜(Cu_2O)薄膜。薄膜样品SERS活性随纳米Cu_2O薄膜吸光度的增大而增强。
Using vacuum electron beam evaporation technology and subsequent thermal oxidation technology, different thickness copper films were prepared on glass substrate. X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the crystal structure and elemental composition of the prepared metallic copper thin films respectively. The absorption spectrum and surface enhanced Raman spectroscopy (SERS) activity of the prepared metallic copper thin films were analyzed by UV-Vis-NIR spectrophotometer and Raman spectrometer respectively. With the increase of film thickness, the annealed film samples changed from amorphous state to polycrystalline state that preferentially grows on the (111) surface with a red shift of absorption edge. When the annealing temperature is 200 ℃ and the annealing time is 60min, single-phase nanocrystalline Cu 2 O films can be obtained. The SERS activity of the film increases with the increase of the absorbance of the Cu_2O thin film.