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采用提拉 (Czochralski)法生长了Nd :LuVO4晶体。利用液相反应法 ,以V2 O5和NH4OH生成NH4VO3 ,Nd2 O3 、Lu2 O3 和HNO3 生成Nd(NO3 ) 3 和Lu(NO3 ) 3 反应制备多晶料 ;所生长Nd0 .0 1Lu0 .99VO4晶体为 16× 2 0× 2 1mm3 ,质量超过 4 0g。以X射线荧光分析仪测得其生长中各主要元素的分凝系数。其中Nd3 + 约为 0 .91,V3 + 和Lu3 + 接近 1。还测定了其介电常数ε11=2 7.2 ,ε3 3 =33.9(30℃ ,1kHz) ,以同步辐射X射线白光形貌术观察了其内部质量
Nd: LuVO4 crystals were grown by the Czochralski method. The polycrystalline materials were prepared by liquid-phase reaction of Nd (NO3) 3 and Lu (NO3) 3 with NH4VO3, Nd2O3, Lu2O3 and HNO3 from V2 O5 and NH4OH. The grown crystal of Nd0.1Lu0.99VO4 was 16 × 2 0 × 2 1mm3, the quality of more than 40g. X-ray fluorescence analyzer measured the growth of the major elements of the condensate coefficient. Nd3 + is about 0.91, and V3 + and Lu3 + are close to one. The dielectric constants ε11 = 2 7.2 and ε3 3 = 33.9 (30 ℃, 1 kHz) were also measured. The internal quality of the films was observed by synchrotron radiation X-ray