微通道板(Microchannel Plate,MCP)是像增强器中实现电子倍增的关键器件。以硅为基体制备的微通道板相对于传统的微通道板在性能方面有很大的提高。在对硅进行反应离子深刻蚀(DRIE)前,需要对充当掩蔽层的金属铝膜进行湿法腐蚀。对于掩模图形为孔径10μm、孔间距5μm的大面阵的微孔阵列,在腐蚀过程中,微孔孔径较小导致溶液对流困难且反应生成物H2极易吸附在反应界面上,影响反应物质的输送和化学反应的进行。如果腐蚀参数不合适,阵列式微孔图形会出现随机腐蚀、不完全腐蚀、过腐蚀等现象。通过加入表面活性剂,减小溶液中表面应力,可以促使反应物H2排出。同时通过逐一控制变量,研究了腐蚀液浓度、腐蚀液温度和腐蚀时间对腐蚀结果的影响。结果表明,腐蚀速率与腐蚀液浓度、腐蚀液温度成正比。通过参数优化,得到了最佳的腐蚀参数。此时图形完整,尺寸准确,解决了微孔阵列的图形化问题。 Microchannel Plate (MCP) is the key device for electron multiplication in image intensifier. The microchannel plate prepared from silicon substrate has a great improvement in performance compared with the traditional microchannel plate. Before performing reactive ion deep etching (DRIE) on silicon, wet etching of the aluminum metal film that serves as a masking layer is required. For the mask array with a large array of micropatterns with a pore size of 10 μm and a pore spacing of 5 μm, the pore size of the micropores is small and the solution convection is difficult and the reaction product H2 is easily adsorbed on the reaction interface during the etching process, affecting the reaction mass The delivery and chemical reaction are carried out. If the corrosion parameters are not suitable, the array micropore pattern will appear random corrosion, incomplete corrosion, over-corrosion and so on. The reactant H 2 can be expelled by adding a surfactant to reduce the surface stress in the solution. At the same time, by controlling the variables one by one, the effects of the concentration of the etching solution, the temperature of the etching solution and the etching time on the corrosion results were studied. The results show that the corrosion rate is proportional to the concentration of the etching solution and the temperature of the etching solution. Through the parameter optimization, the best corrosion parameters are obtained. At this point the graphics complete, accurate size, to solve the microporous array of graphical problems.