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研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构.首先在SiO2/Si(100)衬底上LPCVD生长了高密度Ge/aSi量子点多层结构,然后在较低温度下(低于550℃),利用金属Ni诱导多层结构中的aSi层横向结晶制备出高质量的Ge/Si量子点超晶格结构.通过光学显微镜、电子显微镜和显微喇曼光谱等手段测量研究表明,与单一aSi系统的金属Ni诱导相似,该多层结构中的各αSi层退火后也具有(110)择优取向,同时晶粒的直径较大,约在4～5μm左右.Ge点中的应力状态的变化揭示出诱导结晶后形成高质量的晶态Si与Ge纳米点界面.
The high-density Ge / Si quantum dot multi-layer heterostructures were prepared by low pressure chemical vapor deposition (LPCVD) and metal-induced lateral crystallization technique.Firstly, high density Ge / aSi quantum dots were grown by LPCVD on SiO2 / Si Point multilayered structure, and then the high-quality Ge / Si quantum dot superlattice structure was prepared by inducing the lateral crystallization of the aSi layer in the multilayered structure by using the metal Ni at a lower temperature (lower than 550 ° C.) By using an optical microscope, Electron microscopy and Raman spectroscopy measurements show that, similar to the single-crystal Ni induction in a-Si systems, the αSi layers in the multi-layered structure also have a (110) preferred orientation after annealing and the crystal grains have larger diameters , About 4 ~ 5μm.The change of stress state in Ge point reveals the formation of high quality crystalline Si and Ge nano-point interface after induced crystallization.