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Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multilayer concept is presented to control the property for as-deposited polysilicon. A 3-μm thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/μm stress gradient through the film thickness is fabricated successfully.
Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradients, depending on the deposition condition. A 3 -μm thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristics of polysilicon. The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa / μm stress gradient through the film thickness is fabricated successfully.