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采用间接型射频等离子体增强化学气相沉积方法,通过改变H_2/SiH_4气流量比、工艺功率和工艺压强,制备出了氢化非晶硅薄膜。研究了H_2/SiH_4气流量比、工艺功率以及工艺压强对非晶硅薄膜光学特性的影响。实验结果表明,该方法可以制备出氢化非晶硅薄膜,且通过改变实验条件,可以改变薄膜微观结构及成分;随着H_2/SiH_4气流量比的增加,SiH化合物含量增加,多氢化合物含量降低;适当增加射频功率,可以提高薄膜表面的均匀性,同时,功率的增加会使氢含量增加;此外,薄膜表面氢含量随工艺气压的降低而减小。
Indirect RF plasma enhanced chemical vapor deposition was used to fabricate hydrogenated amorphous silicon thin films by changing the gas flow ratio of H2 / SiH4, process power and process pressure. The effects of H 2 / SiH 4 gas flow ratio, process power and process pressure on the optical properties of amorphous silicon films were investigated. The experimental results show that the method can be used to prepare hydrogenated amorphous silicon thin films. The microstructure and composition of the thin films can be changed by changing the experimental conditions. With the increase of H 2 / SiH 4 gas flow rate, the content of SiH compounds increases and the content of hydrogen compounds decreases Appropriate increase of RF power can improve the uniformity of the surface of the film. Meanwhile, the increase of the power will increase the hydrogen content. In addition, the hydrogen content of the film decreases with the decrease of the process pressure.