【摘 要】
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DyPt2 films were prepared by alternate deposition thin Dy and Pt layers on glass substrates by DC magneto controlled sputtering method. The XRD data indicated t
【机 构】
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Department of Materials Science and Engineering
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DyPt2 films were prepared by alternate deposition thin Dy and Pt layers on glass substrates by DC magneto controlled sputtering method. The XRD data indicated that for as-deposited Dy/Pt films, and the periodic layered structures along thickness direction were evidenced with low angle X-ray scattering. With increasing annealing temperature, the compounds of DyPt, DyPt2 and DyPt3 were formed successively at temperature ranging from 300 to 400℃. It was found that the composition reaction DyPt + DyPt3→2DyPt2 took place at 500℃. After annealing at 500℃ for 1h, the compounds DyPt and DyPt3 transformed completely into the DyPt2 compound.
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