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用真空反应蒸发技术在有机薄膜衬底上制备出ITO透明导电薄膜 ,对薄膜的低温制备 (80～ 2 4 0℃ )、结构和光电特性进行了研究。制备的薄膜为多晶膜 ,具有纯三氧化二铟的立方铁锰矿结构 ,最佳取向为 (111)方向。薄膜在可见光区的最低电阻率为 6 .6 3× 10 - 4Ω·cm ,透过率达到 82 %。
The transparent conductive ITO thin film was prepared on the organic thin film substrate by the vacuum reaction evaporation technique. The structure and photoelectric properties of the thin film were studied at low temperature (80 ~ 240 ℃). The prepared thin film is a polycrystalline film with a cubic bismuth structure with pure indium oxide, the best orientation is (111) direction. The lowest resistivity of the film in the visible region is 6. 6 3 × 10 - 4 Ω · cm and the transmittance is 82%.