论文部分内容阅读
,Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
【机 构】
：
Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2010年5期
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