论文部分内容阅读
针对Si基双极型低噪声放大器(LNA),用脉冲调制150MHz射频信号在其输入端进行了能量注入实验,研究结果表明Si基LNA的噪声系数和增益特性都是注入能量的敏感参数.样品解剖和电路仿真显示能量作用使LNA内部晶体管出现基极/发射极金属化损伤,基极金-半接触电阻增大导致了LNA噪声系数增大,而Si基双极器件hFE随时间正向漂移损伤模式使LNA增益随注入能量的增加而增大.研究表明,由于能量作用下损伤效应的复杂性,以往可靠性研究中单纯采用增益的变化来衡量器件与电路的损伤效应的方法是不全面的.
For Si-based bipolar LNAs, a 150 MHz RF signal is pulsed with an energy injection at its input. The results show that both the noise figure and the gain characteristics of the Si-based LNA are sensitive parameters for the injected energy. Anatomical and circuit simulations show that the energy effect causes base / emitter metallization damage in the LNA internal transistor, increased base gold-half contact resistance results in an increase in the LNA noise figure, and the hFE-based bipolar device drifts forward with time Damage modes increase the gain of LNA with the increase of injected energy.The research shows that the method to measure the damage effect of devices and circuits by simply using the change of gain in the past reliability studies is not comprehensive due to the complexity of the damage effect under the action of energy of.