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使用自动变温霍耳测试系统测定了减压ＭＯＶＰＥ外延生长的锌δ掺杂ＧａＡｓ结构．结果表明，改进δ掺杂工艺在５５０℃下掺杂可获得高达３×１０１３／ｃｍ２的室温二维空穴浓度．在１５～８０Ｋ低温下发现高浓度Ｚｎδ掺杂ＧａＡｓ样品中出现反常霍耳导电行为．
The zinc δ-doped GaAs structure grown by vacuum-epitaxial MOVPE epitaxial growth was measured using an automatic temperature-changing Hall test system. The results show that the room temperature two-dimensional hole concentration of up to 3 × 1013 / cm2 can be obtained by doping δ-doped at 550 ℃. The anomalous Hall conduction behavior was found in high concentration Znδ-doped GaAs samples at 15 ~ 80K.