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超低电压驱动高速低功耗触发电路据日本《ＮＥＣ技报》１９９４年第４期报道，ＮＥＣ公司开发了一种新的触发电路。该电路中使用了栅长为０．２５Ｐｍ的ＧａＡｓ异质结ＦＥＴ（ＨＪＦＥＴ），用０．８Ｖ的低电源电压首次实现了１０ＧｂＰＳ的高速运作。基本电路为高集成化...
Ultra-low voltage drive high-speed low-power trigger circuit According to Japan’s “NEC Technology News” No. 4, 1994 reported that NEC has developed a new trigger circuit. The circuit uses a GaAs heterojunction FET (HJFET) with a gate length of 0.25 Pm and achieves the first 10 GbPS high-speed operation with a low 0.8 V supply voltage. The basic circuit is highly integrated ...