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采用自主开发的工艺加工技术和设计方法,直接将两个微波SiC MESFET管芯在管壳内部进行并联,实现了器件在S波段脉冲状态下(工作频率2GHz,脉冲宽度30μs,占空比10%)输出功率大于30W、功率增益12dB、功率附加效率大于30%的性能指标。由于直接采用管芯并联结构,省略了内匹配网络,器件的体积和重量较以往的Si微波双极功率晶体管大为降低;采用高温氧化技术克服了传统MESFET工艺中PECVD介质产生较高界面态的不足,减小了器件的泄漏电流,提高了器件性能。器件的研制成功,初步显示了SiC微波脉冲功率器件在体积小、重量轻、增益高、脉冲大功率输出和制作工艺简单等方面的优势。
Using self-developed process technology and design method, two microwave SiC MESFET dies are directly connected in parallel inside the package to achieve the device under the S-band pulse condition (working frequency 2GHz, pulse width 30μs, duty cycle 10% ) Output power is greater than 30W, power gain 12dB, additional efficiency of more than 30% efficiency of the performance indicators. Due to the parallel structure of the die and die, the internal matching network is omitted, and the size and weight of the device are greatly reduced compared with the conventional Si-Bipolar bipolar transistor. The high-temperature oxidation technology overcomes the high interfacial state of the PECVD medium in the conventional MESFET process Insufficient, reducing the leakage current devices and improve device performance. The successful development of the device initially shows the advantages of the SiC microwave pulse power device in terms of small size, light weight, high gain, high pulse output and simple manufacturing process.