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The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure.The growth temperature of films was 100℃,250℃,400℃and 550℃.The structure and composition were analysised by Raman scattering.The poly-crystal peak and crystal peak of Ge were observed in these films.The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400℃.The peak of acoustic phonons of Ge was 98 cm~(-1) and that of Si was 170 cm~(-1).
The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure. The growth temperature of the films was 100 ° C, 250 ° C, 400 ° C and 550 ° C. The structure and composition were analyzed by Raman scattering.The poly-crystal peak and crystal peak of Ge were observed in these films. The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400 ° C. The peak of acoustic phonons of Ge was 98 cm ~ ( -1) and that of Si was 170 cm ~ (-1).