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微波介质器件的薄膜化已经成为微波器件的一个研究热点,本文从微波介质陶瓷薄膜化角度在不同低介电常数的介质衬底上溅射制备了MCT陶瓷薄膜,实验结果表明:(110)晶面的单晶SiO2片上的可以在较低温度(610℃)下获得良好结晶情况,介电特性可以和块状材料的多晶MCT陶瓷薄膜相媲美。随着衬底温度升高,薄膜晶体结构逐步由游离MgO向微晶MCT、多晶MCT到粗大的柱状晶MCT变化。较好沉积温度是610℃～650℃。
Thinning of microwave dielectric devices has become a hot research topic in microwave devices. In this paper, MCT ceramic thin films are prepared by sputtering on different low dielectric constant dielectric substrates from the perspective of microwave dielectric ceramic thin film. The experimental results show that the (110) crystal Surface of the single crystal SiO2 film can be obtained at a lower temperature (610 ℃) under the good crystallization, dielectric properties and bulk materials can be comparable to polycrystalline MCT ceramic film. As the substrate temperature increases, the crystal structure of the thin film gradually changes from free MgO to microcrystalline MCT, polycrystalline MCT to coarse columnar crystal MCT. The preferred deposition temperature is 610 ° C to 650 ° C.