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采用酞菁铁高温热解方法,以化学镀铜层为缓冲层在具有微方结构阵列的硅基底上制备了CNTs薄膜,基底微方阵列的单元尺度分别为10μm×10μm×20μm(微方底边长为10μm,高为20μm)和40μm×40μm×20μm(微方底边长为40μm,高为20μm),微结构的阵列间距分别为30μm和80μm;在20GW脉冲功率源系统中采用二极管结构对两种CNTs薄膜进行强流脉冲发射特性测试。结果显示:随着脉冲电场峰值的增大,两种冷阴极的强流脉冲发射电流值逐渐增大,在相同峰值的脉冲电场下,微方结构单元尺度为10μm×10μm×20μm的基底上CNTs薄膜冷阴极的发射能力较大。结合利用有限元分析软件ANSYS模拟计算的微方阵列结构上表面的电场分布,研究了基底上两种微方阵列结构对碳纳米管薄膜强流脉冲发射能力的影响。
CNTs thin films were prepared on a silicon substrate with a micro-structure array by using electroless copper plating as buffer layer. The cell dimensions of the substrate micro-array were 10μm × 10μm × 20μm Side length of 10μm, height of 20μm) and 40μm × 40μm × 20μm (microtrope bottom length of 40μm, height of 20μm), the microstructure array spacing were 30μm and 80μm; 20GW pulsed power source system using a diode structure Two kinds of CNTs films were tested for their high current pulse emission characteristics. The results show that with the increase of the pulse electric field, the intensity of the pulsed current increases with the increase of the pulse electric field. Under the same peak pulse electric field, CNTs with 10μm × 10μm × 20μm microstructure Thin film cold cathode emission capability. The influence of the two kinds of micro-array structures on the pulsed emission of carbon nanotubes (CNTs) films was investigated based on the simulation of the electric field distribution on the top surface of the micro-square array structure by the finite element analysis software ANSYS.