半导体探测器的优异性能使其应用得到迅速发展。对面垒型探测器整流机理的研究结果表明,探测器的性能好坏与其表面态有着密切关系。有人研究过,在真空状态下,金与n型硅表面经特定工艺制成的探测器,是没有整流特性的,但若让空气进入真空系统,则探测器具有整流特性。然而,在空气中暴露之后,已经产生整流特性的探测器,如重新把它置入真空系统之下,反向电流又会增加,整流特性则变差。因此,可认为空气中氧对探 The excellent performance of semiconductor detectors has led to the rapid development of their applications. The research results of the rectifying mechanism of the opposite-type detector show that the performance of the detector is closely related to its surface state. It has been studied in the vacuum state, gold and n-type silicon surface made by a specific process of the detector is not rectifying characteristics, but if the air into the vacuum system, the detector has a rectifying characteristics. However, after exposure to air, a detector that has produced a rectifying characteristic, such as re-placing it under a vacuum system, increases its reverse current and its rectifying characteristics deteriorate. Therefore, we can think of oxygen in the air exploration