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采用自行研制的ＬＢ自动提膜装置，制备出大面积（１０×８ｃｍ２）、高质量的ＰＭＭＡ超薄抗蚀剂膜，并将其用于高分辨率铬掩模版的研制。通过电子束曝光，湿法蚀刻，制作了分辨率优于０．５μｍ，特征线宽０．３８μｍ的４（１００ｍｍ）铬掩模版。
A large area (10 × 8cm2), high quality PMMA thin resist film was prepared by using self-developed LB automatic film lifting device and was used for the development of high resolution chromium reticle. By electron beam exposure and wet etching, a 4 (100 mm) chrome reticle with a resolution of better than 0.5 μm and a characteristic linewidth of 0.38 μm was fabricated.