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采用0.13μm SiGe BiCMOS工艺,设计了一个中心频率为150GHz的低损耗Lange耦合器。使用λ/4波长线为耦合线,4个端口采用50Ω匹配线以降低回波损耗;为得到更好的插入损耗,在耦合器对应的地面打孔形成地面隔离带,有效降低了插入损耗。仿真结果表明,耦合器在中心频率150GHz处,带宽20GHz范围内的耦合度为3.5dB,插入损耗小于0.6dB,回波损耗与隔离度均小于-20dB,相位误差在2°之内,耦合输出与直通输出幅值误差在0.1dB以下。该Lange耦合器在D波段功率放大器、混频器、移相器等电路中有很好的应用前景。
A 0.13μm SiGe BiCMOS process was used to design a low loss Lange coupler with a center frequency of 150GHz. Use the λ / 4 wavelength line as the coupling line, and the 4 ports use the 50Ω matching line to reduce the return loss. In order to obtain better insertion loss, a ground isolation band is formed on the ground corresponding to the coupler, effectively reducing the insertion loss. The simulation results show that the coupler has a coupling degree of 3.5dB at a center frequency of 150GHz and a bandwidth of 20GHz, an insertion loss of less than 0.6dB, a return loss of less than -20dB and a phase error of less than 2 degrees. The coupled output And through the output amplitude error of 0.1dB or less. The Lange coupler has good application prospects in D-band power amplifiers, mixers, phase shifters and other circuits.