Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

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Exploring materials with multiple properties who can endow a simple device with integrated function-alities has attracted enormous attention in the microelectronic field.One reason is the imperious demand for processors with continuously higher performance and totally new architecture.Combining ferroelec-tric with semiconducting properties is a promising solution.Here,we show that logic,in-memory com-puting,and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In2Se3 as the channel.Two-input AND,OR,and non-volatile NOR and NAND logic operations with current on/off ratios reaching up to five orders,good endur-ance (1000 operation cycles),and fast operating speed (10 μs) are realized.In addition,optoelectrical OR logic and non-volatile implication (IMP) operations,as well as ternary-input optoelectrical logic and in-memory computing functions are achieved by introducing light as an additional input signal.Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors.
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