采用Delta掺杂技术制备了p型氮化镓薄膜,并利用原子力显微镜、霍尔测试、X射线衍射、荧光光谱等测试手段对样品的形貌和电导性能进行了分析,发现Delta掺杂样品比均匀掺杂样品晶体质量和电导性能都有很大提高,说明Delta掺杂可有效抑制缺陷,并对缺陷抑制机理进行了讨论;最后,对掺杂前的预通氨过程作了深入的研究,结果发现,预通氨对掺杂不益. The p-type gallium nitride thin films were prepared by Delta doping technology. The morphology and conductivity of the samples were analyzed by atomic force microscopy, Hall test, X-ray diffraction and fluorescence spectroscopy. It was found that Delta-doped samples The homogeneously doped samples have greatly improved the crystal quality and electrical conductivity, indicating that Delta doping can effectively suppress the defects and the defect inhibition mechanism is discussed. Finally, the pre-doping ammonia pretreatment process is studied in depth, The results showed that pre-ammonia on the doping benefit.