论文部分内容阅读
提出了一种检测光刻机投影物镜密集线焦深(DOF)的新技术。该技术将具有精细结构的测量标记曝光在硅片上,硅片显影后,由光学对准系统获取曝光在硅片上的测量标记图形的对准位置信息,根据对准位置信息计算得到视场中各点的焦深。与传统的FEM焦深测试技术相比,该技术具有测量精度高、速度快、成本低、操作简单等优点,在光刻工艺参数优化及光刻设备性能评价等方面有很好的应用前景。
A new technique to detect the focal depth of focus (DOF) of projection lens in lithography was proposed. The technology exposes the measurement mark with the fine structure to the silicon wafer. After the silicon wafer is developed, the optical alignment system obtains the alignment position information of the measurement mark pattern exposed on the silicon wafer, and calculates the field of view according to the alignment position information The depth of focus in each point. Compared with traditional FEM depth-of-focus testing technology, this technique has the advantages of high precision, high speed, low cost and simple operation. It has good application prospects in the lithography process parameters optimization and lithography equipment performance evaluation.