论文部分内容阅读
为解决在强源且源强大幅度变化情况下NaI(T1)闪烁谱仪的能谱漂移和脉冲堆积问题以及一般使用条件下由光电倍增管分压电阻温度效应、高压和电子学系统引起的能谱漂移问题,我们采用GaAsP半导体发光二极管作标准脉冲光源,加上T型滤波器和快甄别器等建立了一个稳谱和抗堆积系统(见图1)。光电倍增管阳极收集电阻为50Ω,输出电流型脉冲,装在快放大器输入部分的T型滤波器可使脉冲变窄为0.3μs,减少了脉冲堆积,再用快甄别器排除能谱中大量低能本底,以减少主放大器和脉冲分析器承受的计数率。主
In order to solve the problem of energy spectrum drift and pulse accumulation of NaI (Tl) scintillation spectrometer under the condition of strong source and great change of source, and the voltage-dependent resistance temperature effect, high-voltage and electronic system under normal conditions of use Spectral drift, we use GaAsP semiconductor light-emitting diode as a standard pulsed light source, coupled with the T-type filter and fast discriminator to establish a stable spectrum and anti-piling system (see Figure 1). Photomultiplier tube anode collection resistance of 50Ω, the output current pulse, installed in the fast amplifier input part of the T-type filter pulse narrowed to 0.3μs, reducing the pulse accumulation, and then use the fast discriminator to exclude a large number of low-energy spectrum Background to reduce the count rates experienced by the main amplifier and the pulse analyzer. the Lord