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采用半导体激光器制备了硅基AlGaInP发光二极管,研究了激光能量密度、重复频率及平台加工速度对加工效果的影响,利用电子显微镜等测试工具分析了经激光加工后的硅基LED芯片表面和侧面形貌等结构特性,获得了较优的加工参数。
Silicon-based AlGaInP LEDs were fabricated by using semiconductor lasers. The effects of laser energy density, repetition frequency and processing speed on the processing efficiency were studied. The surface and side profile of silicon-based LED chips after laser processing were analyzed by using electron microscope and other testing tools. Appearance and other structural characteristics, access to better processing parameters.