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采用分子束外延的方法在BaF2(111)衬底上制备出了高质量的Pb1-xMnxSe(0≤x≤0.0681)薄膜.X射线衍射结果表明,Pb1-xMnxSe薄膜为立方相NaCl型结构,没有观察到MnSe相分离现象,薄膜的取向为平行于衬底(111)晶面.晶格常数随着Mn含量的增加逐渐减小,Mn含量由Vegard公式得到.通过理论模拟Pb1-xMnxSe薄膜的透射光谱,得到了Pb1-xMnxSe薄膜的带隙与Mn组分的关系,Pb1-xMnxSe薄膜的带隙宽度由0.28eV(x=0)按e指数形式增加到0.49eV(x=0.0681).同时还获得了Pb1-xMnxSe薄膜在波长为4—9.5μm间的折射率.
High quality Pb1-xMnxSe (0≤x≤0.0681) thin films were prepared on BaF2 (111) substrates by molecular beam epitaxy.The results of X-ray diffraction showed that the Pb1-xMnxSe films were cubic NaCl phase structure without The MnSe phase separation phenomenon was observed and the orientation of the film was parallel to the (111) plane of the substrate. The lattice constant decreased with the increase of Mn content and the Mn content was obtained by the Vegard equation. By simulating the transmission of Pb1-xMnxSe thin film The bandgap of Pb1-xMnxSe thin film is related to the composition of Mn. The bandgap width of Pb1-xMnxSe thin film increases from 0.28eV (x = 0) to 0.49eV (x = 0.0681) The refractive index of Pb1-xMnxSe films at wavelengths of 4-9.5μm was obtained.