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利用瞬态光栅激光光谱技术测量了(110)方向生长的本征GaAs/AlGaAs多量子阱的双极扩散系数.室温下,光激发的载流子浓度nex=3.4×1010/cm2时,测得双极扩散系数Da=13.0cm2/s,载流子的寿命τR=1.9ns.改变光激发的载流子浓度(nex≤1.2×1011/cm2)测量,发现双极扩散系数不随着载流子浓度的增加而变化.
Bipolar diffusion coefficients of intrinsic GaAs / AlGaAs MQWs grown in the (110) direction were measured by using transient grating laser spectroscopy. When the photoexcited carrier concentration nex = 3.4 × 1010 / cm2 at room temperature, Bipolar diffusion coefficient Da = 13.0cm2 / s, the carrier lifetime τR = 1.9ns. Change the photo-excited carrier concentration (nex ≤ 1.2 × 1011 / cm2) measured and found that the bipolar diffusion coefficient does not change with the carrier Concentration increases with the change.