Cree在2011 IEEE国际微波论坛上演示了首个工业级卫星通信用C波段GaN HEMT MMIC大功率放大器。该产品具有引人注目的性能,超越了目前的商用GaAs MESFET晶体管或行波管放大器。据Cree的RF主管Jim Milligan介绍,“这是卫星通信用GaN MMIC的首次 Cree demonstrated the first C-band GaN HEMT MMIC high power amplifier for industrial satellite communications at the 2011 IEEE International Microwave Forum. The product has compelling performance beyond the current commercial GaAs MESFET transistors or traveling wave tube amplifiers. According to Cree’s RF director Jim Milligan, ”This is the first time that a GaN MMIC for satellite communications has been used