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研究了预烧结和未烧结的两种高纯SiO_2隔离层对多晶硅锭少子寿命、氧浓度以及相应光伏组件光致衰减(LID)率的影响。采用含有预烧结隔离层的坩埚和未烧结隔离层的坩埚分别进行多晶硅铸锭实验并测试硅锭及相应光伏组件的性能。结果显示,两种隔离层对铁杂质都具有阻挡作用,预烧结的隔离层有利于降低硅锭中的氧浓度,其对应的硅锭中氧浓度和组件光致衰减率均为最低,而未经烧结的隔离层并未体现出这一作用。通过两种隔离层的SEM图像可以发现,经过预烧结工艺的隔离层结构更为致密;而未经烧结的隔离层中孔隙较多,可能容易引起硅熔体与隔离层或者坩埚进行反应,将较多的氧杂质引入到硅锭中,从而造成氧含量的增加并引起组件较高的光致衰减率。
The effects of pre-sintered and unsintered two kinds of high-purity SiO 2 isolation layers on the lifetime and oxygen concentration of polycrystalline silicon ingots and the photoinduced attenuation (LID) of PV modules were studied. Polysilicon ingot experiments were performed using a crucible containing a pre-sintered barrier layer and an unsintered barrier layer, respectively, and the properties of the silicon ingot and the corresponding photovoltaic module were tested. The results show that the two kinds of barrier layer have a barrier effect on iron impurities, the pre-sintered barrier layer is conducive to reduce the oxygen concentration in the silicon ingot, the corresponding silicon ingot oxygen concentration and light-induced attenuation rate was the lowest, but not The sintered barrier does not reflect this effect. SEM images of the two kinds of isolation layers show that the structure of the isolation layer after the pre-sintering process is denser, while the pores in the non-sintered isolation layer are more likely to cause the silicon melt to react with the isolation layer or the crucible. More oxygen impurities are introduced into the silicon ingot, resulting in an increase in oxygen content and causing a higher rate of photoinduced attenuation of the module.