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石墨烯具有电子迁移率高、透过率高(T≈97.7%)且费米能级可调的特性。砷化镓的电子迁移率比硅的大5到6倍。引入砷化铟量子点后,光电探测器具有低暗电流、高工作温度、高响应率和探测率的特点,因而可被用于制备响应快、量子效率高和光谱宽的光电探测器。对基于InAs/GaAs量子点-石墨烯复合结构的肖特基结的Ⅰ-Ⅴ特性和光电响应进行了研究。结果表明,在0 V偏压下,该器件在400 nm~950 nm均有响应,峰值响应率可达0.18 A/W;在反向偏压下,器件的峰值响应率可达到0.45 A/W。通过对暗电流随温度变化的特性进行分析,得到了InAs/GaAs量子点一石墨烯肖特基结在室温附近以及80 K附近的势垒高度。
Graphene has the characteristics of high electron mobility, high transmittance (T ≈ 97.7%) and Fermi level can be adjusted. Gallium arsenide has 5 to 6 times more electron mobility than silicon. The introduction of indium arsenide quantum dots, photodetectors with low dark current, high operating temperature, high response rate and detection rate characteristics, which can be used to prepare fast response, high quantum efficiency and wide spectral photodetector. The I-V characteristics and the photoelectric response of Schottky junction based on InAs / GaAs quantum dot-graphene composite structure were studied. The results show that the device responds at 400-950 nm with a peak response rate of 0.18 A / W at 0 V bias and a peak response rate of 0.45 A / W at reverse bias . By analyzing the characteristics of dark current with temperature, the barrier height of InAs / GaAs quantum dots-graphene junction near room temperature and near 80 K was obtained.