罗姆与大阪大学研究生院工学研究科助教细井卓治、京都大学研究生院工学研究科教授木本恒畅及东电电子合作试制出了新的SiC制MOSFET。特点是将透过栅极绝缘膜的漏电流减小了90%,并将绝缘耐压提高到了原来的1.5倍。此次是通过采用介电常数高的铝氧化物作为栅极绝缘膜,减小了漏电流并提高了耐压的。原来采用的是SiO_2。 Rohm and Osaka University Graduate School of Engineering, Assistant Professor Akira well Jing Zhuo, Kyoto University Graduate School of Engineering Professor Mu Benchang Chang and TEDA trial production of a new SiC MOSFET. It features a 90% reduction in leakage through the gate insulating film and a 1.5 times increase in dielectric strength. This time through the use of high dielectric constant aluminum oxide as the gate insulating film, reducing the leakage current and increased withstand voltage. The original use of SiO_2.