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对氢氧合成栅氧化后注F的MOSFET进行了γ射线辐照试验,分析了不同注F剂量的MOSFET电离辐射响应特性。结果表明,在1×10~(15)～1×10~(16)F/cm~2F注量范围内,注F能够明显抑制辐射感生氧化物电荷和界面态的增长,且F注量越高,抑制能力越强,F的注入能减少工艺过程所带来的氧化物电荷和界面态。用Si一F结键替代其它在辐射过程中易成为电荷陷阱的应力键模型对实验结果进行了讨论。可以预测,F在Si/SiO_2界面附近和SiO_2中的行为直接与MOS结构的辐射响应相对应,而F的行为依赖于注F工艺条件。
Gamma-ray irradiation experiments were carried out on the MOSFETs with the gate-oxide after the oxysynthesis. The response characteristics of ionizing radiation of the MOSFETs with different doses of F were analyzed. The results showed that the injection of F can significantly inhibit the growth of the charges and interface states of radiation-induced oxide in the fluency of 1 × 10 ~ (15) ~ 1 × 10 ~ (16) F / cm ~ 2F, The higher the inhibition, the stronger the F implantation can reduce the oxide charge and the interface state brought by the process. The experimental results are discussed by using Si-F bond instead of other stress-bond models which are easy to become charge traps in the process of radiation. It can be predicted that the behavior of F near the Si / SiO 2 interface and SiO 2 corresponds directly to the radiation response of the MOS structure, whereas the behavior of F depends on the F-injection process.