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对计算化合物晶体点缺陷的模型做了改进,在此基础上建立了一种精确测定GaMnAs中Mn组分的方法,并且在测定GaMnAs晶格参数的实验过程中,建立了一种消除X射线衍射仪零点漂移的方法,提高了测定晶格参数的精确度.采用该方法测试分析了离子束外延技术制备的GaMnAs单晶中Mn组分.
A new model for calculating the crystal point defects of the compound was developed. Based on this, a method for accurately determining the Mn content in GaMnAs was established. In the experiment of measuring the lattice parameters of GaMnAs, a new method to eliminate the X-ray diffraction The zero drift of the instrument is improved, and the accuracy of measuring the lattice parameters is improved. The Mn composition of GaMnAs single crystal prepared by ion beam epitaxy is tested and analyzed by this method.