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采用脉冲激光沉积方法,在制备有LaNiO3(LNO)底电极的LaAlO3(LAO)衬底上,分别在500,600℃和700℃的沉积温度下制备了锆钛酸钡Ba(Zr0.2Ti0.8)O3(BZT)薄膜。通过X射线衍射表征薄膜的结构特性,原子力显微镜和扫描电子显微镜分别用来表征样品的表面和断面形貌。结果表明:BZT薄膜与LNO具有c轴取向,并以cube-on-cube方式排列生长。BZT薄膜表面致密无裂缝,具有柱状生长的晶粒。薄膜的介电性能测试显示:600℃下沉积的BZT薄膜具有较高的介电可调性(49.1%)和较低的介电损耗(2.5%)。在600℃下沉积的BZT薄膜的优值因子(figure of merit,FOM)达到19.8。
Barium zirconate titanate Ba (Zr0.2Ti0.8) O3 was prepared on the LaAlO3 (LAO) substrate prepared with LaNiO3 (LNO) bottom electrode by using pulsed laser deposition method at 500, 600 ℃ and 700 ℃ respectively. (BZT) film. Characterization of the structure of the film by X-ray diffraction, atomic force microscopy and scanning electron microscopy were used to characterize the sample surface and cross-sectional morphology. The results show that the BZT films and LNO have c-axis orientation and grow in a cube-on-cube manner. BZT thin film surface without cracks, with columnar growth grains. The dielectric properties of the films show that the BZT thin films deposited at 600 ℃ have higher dielectric tunability (49.1%) and lower dielectric loss (2.5%). The BZT thin film deposited at 600 ℃ had a figure of merit (FOM) of 19.8.