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本工作研究了二种不同衬底温度的直流辉光放电沉积非晶态硅氢薄膜(a-Si:H_x)热处理后的结构、氢含量及光电异性能的变化。热处理条件:温度(T_a)范围200～800℃,升温速率10℃/分,保温时间30分。试验结果表明,沉积时衬底温度为室温的a-Si:H_x试样的原始结构呈大颗粒卵石形形貌,经200℃热处理后,卵石形貌趋向平整。红外吸收光谱表明,已有少量氢逸出,硅氢键的红
In this work, the structure, hydrogen content and photo-electricity anisotropy of amorphous silicon hydride films (a-Si: H_x) deposited by DC glow discharge deposition at two different substrate temperatures were investigated. Heat treatment conditions: temperature (T_a) range 200 ~ 800 ℃, heating rate 10 ℃ / min, holding time 30 minutes. The experimental results show that the original structure of a-Si: H_x sample with a substrate temperature of room temperature during deposition shows a large-sized pebble-shaped morphology. After heat treatment at 200 ° C, the pebble morphology tends to be flat. Infrared absorption spectra show that a small amount of hydrogen has escaped and the silicon-hydrogen bond has been red