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采用原子层沉积系统中自带的等离子体发生器产生N_2等离子体直接处理InP表面,系统地研究了氮化对Al_2O_3/InP金属氧化物半导体(MOS)电容界面特性及栅漏电特性的影响。实验结果表明,氮化能有效降低界面缺陷密度和边界缺陷密度,抑制InP表面自然氧化物的形成,改善界面质量,提高Al_2O_3/InP MOS电容的电学性能。氮化之后,在Al_2O_3/InP界面会形成一个约为0.8 nm厚的界面层,积累区频散由7.8%降低至3.5%,滞回由130减小至60 mV,界面缺陷密度由5×10~(12)降低至2×10~(12)cm~(-2)·eV~(-1),边界缺陷密度由9×10~(11)降低至5.85×10~(11)V~(-1)cm~(-2),栅漏电流由9×10~(-5)降低至2.5×10~(-7)A/cm~2,这些数据充分证明了采用N_2等离子体直接处理InP表面来钝化Al_2O_3/InP界面的方法是有效的。
N 2 plasma was used to directly process the InP surface by using a plasma generator in an atomic layer deposition system, and the influence of nitriding on the interface characteristics and the gate leakage characteristic of the Al 2 O 3 / InP metal oxide semiconductor (MOS) capacitor was systematically studied. The experimental results show that nitriding can effectively reduce the interface defect density and the boundary defect density, suppress the formation of native oxide on the InP surface, improve the interface quality and improve the electrical performance of the Al_2O_3 / InP MOS capacitor. After nitriding, an interface layer with a thickness of about 0.8 nm is formed on the Al 2 O 3 / InP interface, the dispersion in the accumulation region is reduced from 7.8% to 3.5%, the hysteresis is reduced from 130 to 60 mV, and the interface defect density is from 5 × 10 (12) to 2 × 10 ~ (12) cm -2 · eV -1, the density of boundary defects decreased from 9 × 10 ~ (11) to 5.85 × 10 ~ (11) V ~ -1) cm ~ (-2), and the gate leakage current decreased from 9 × 10 -5 to 2.5 × 10 -7 A / cm 2. These data fully demonstrate that using N 2 plasma to directly process InP Surface to passivation Al_2O_3 / InP interface method is effective.