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综述了离子束科学技术领域新的重要进展──从作为半导体掺杂手段的低剂量（１０１１～１０１６／ｃｍ２）离子注入到高剂量（１０１７～１０１８／ｃｍ２）离子注入合成新材料的离子束合成技术。讨论了高剂量注入的物理效应，介绍了利用高剂量氧注入硅合成ＳＩＭＯＸ材料的物理过程以及ＳＩＭＯＸ技术的多种应用。提出了提高ＳＩＭＯＸ材料性能的各种途径。
This paper reviews the important advances in the field of ion beam science and technology ─ ─ ion beam synthesis from a low dose (1011 ~ 1016 / cm2) ion implantation to a high dose (1017 ~ 1018 / cm2) ion implantation as a semiconductor doping method technology. The physical effects of high dose injection are discussed. The physical process of synthesizing SIMOX using high dose oxygen injection of silicon and the various applications of SIMOX technology are introduced. Various ways to improve the properties of SIMOX materials have been proposed.