三元合金异质结是异质结器件的重要材料,它广泛应用于微波和光电器件中。如组分x=0.3的合金异质结可用于研制高电子迁移率晶体管(HEMTs)、绝缘栅场效应晶体管(HIGFETs)和谐振隧道二极管(RTDs);组分x=0.53的三元合金异质结广泛应用于光电子的高速光电器件中。在决定量子阱、超晶格电子态的因素中,半导体异质结界面两侧价带带阶△E_v值(即valence-band offsets)是重要的物 Ternary alloy heterojunction is an important material heterojunction device, which is widely used in microwave and optoelectronic devices. For example, the alloying heterojunction with component x = 0.3 can be used for the fabrication of high electron mobility transistors (HEMTs), insulated gate field effect transistors (HIGFETs) and resonant tunneling diodes (RTDs); ternary alloy heterogeneity of component x = 0.53 Junction is widely used in optoelectronic high-speed optoelectronic devices. Among the factors determining quantum states and superlattice electronic states, valence-band offsets (valence-band offsets) on both sides of the semiconductor heterojunction interface are important