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报道了采用富 Cd原料的无籽晶垂直布里奇曼法生长高阻碲锌镉 Cd0 .8Zn0 .2 Te(CZT)单晶体的新工艺 ,对所生长的晶体作了 X射线衍射分析、红外透过率测试、光吸收截止波长测量及电学性能测试 .晶体在 4 4 0 0～ 4 5 0 cm- 1范围内的红外透过率达到 5 0 % ,截止吸收波长为 787.6 nm,带隙为 1.5 74 e V,室温电阻率达到 2× 10 1 0 Ω· cm ,已接近本征 Cd0 .8Zn0 .2 Te半导体的理论值 .用该晶体制作的核探测器在室温下对 2 4 1 Am和 1 0 9Cd放射源均有响应 ,并获得了比较好的 2 4 1 Am- 5 9.5 ke V吸收谱 .结果表明改进的方法是一种生长室温核辐射探测器应用的高阻 CZT单晶体的简便有效的新方法
This paper reports the new technology of growing high resistivity Cd0.8Zn0.2 Te (CZT) monocrystal by using seed-free vertical Bridgman method of Cd-rich raw materials. The grown crystals were characterized by X-ray diffraction, The rate of light absorption cut-off wavelength measurement and the electrical property test.The infrared transmittance of the crystal in the range of 4 4 0 0 ~ 45 0 cm-1 reaches 50%, the cut-off absorption wavelength is 787.6 nm and the band gap is 1.5 74 e V, the resistivity at room temperature reaches 2 × 10 1 Ω · cm, which is close to the theoretical value of the intrinsic Cd0.8Zn0.2 Te semiconductor. The nuclear detector fabricated with this crystal has a linearity of 2 4 1 Am and 1 0 9Cd radioactive sources, and a good absorption spectrum of 2 4 1 Am-5 9.5 ke V was obtained.The results show that the improved method is a simple and effective method for growing high-resistance CZT single crystals using room temperature nuclear radiation detector new method