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为满足国内半导体器件单粒子效应(SEE)截面与温度的关系研究需求,本文基于北京HI-13串列加速器SEE辐照实验终端研制了样品温度测控系统,实现了90~450K范围内实验样品温度的测量和控制,系统控制精度好于±1K。为验证系统可靠性,使用该系统研究了SRAM单粒子翻转(SEU)截面随温度的变化关系,在215~353 K范围内测量了SRAM翻转截面随温度的变化曲线。结果表明,SRAM SEU截面随温度的升高而增加,与理论预期结果一致。
In order to meet the research needs of the relationship between single particle effect (SEE) cross section and temperature in domestic semiconductor devices, a temperature measurement and control system was developed based on the SEE irradiation experiment terminal of Beijing HI-13 Tandem Accelerator. The experimental temperature of 90 ~ 450K The measurement and control, the system control accuracy better than ± 1K. In order to verify the reliability of the system, the system was used to study the relationship between temperature and the single-chip SRAM (SEU) section of SRAM. The temperature dependence of SRAM flip section was measured in 215 ~ 353K. The results show that the cross-section of SRAM SEU increases with the temperature, which is consistent with the expected theoretical results.