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This paper explores an alternative to the standard method of studying the responsivities(the input-output gain) and other behaviours of detectors at low electron energy.The research does not aim to compare the results of differently doped n~+p detectors;its purpose is to provide an alternative characterization method(using scanning electron microscopy) to those used in previous studies on the responsivity of n~+p doped detectors as a function of the electron radiation energy and other interface parameters.
This paper explores an alternative to the standard method of studying the responsivities (the input-output gain) and other behaviors of detectors at low electron energy. The research does not aim to compare the results of separately doped n ~ + p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n ~ + p doped detectors as a function of the electron radiation energy and other interface parameters.