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将 Ar(95%)-SiH_4(2.5%)-D_2(2.5%)混合气体在等离子体直流正辉区用化学气相沉淀(PCVD))方法制备 a-Si:D/H 薄膜.采用双探针技术测量了混合气体等离子体参数,红外照相方法测量了反应腔壁温度.结果表明,基片支架对反应腔的等离子体有干扰,反应腔壁温度分布不均匀;基片温度高的区域薄膜沉淀速率大;加大电源功率可提高薄膜沉淀速率.
A-Si: D / H thin films were prepared by the chemical vapor deposition (PCVD) method using Ar (95%) - SiH 4 (2.5%) - D 2 (2.5% The gas plasma parameters were measured by infrared spectroscopy and the infrared spectrophotometry was used to measure the wall temperature of the reaction chamber.The results showed that the substrate support had interference with the plasma in the reaction chamber and the temperature distribution in the reaction chamber was not uniform. Large rate; increase the power can increase the film deposition rate.