针对热激励硅基谐振型压力传感器温度漂移严重的问题,提出了一种双梁硅基谐振型压力传感器结构,利用不测试压力的谐振梁感应温度对谐振梁的变化,并与测试压力的谐振梁相减,消除测试压力的谐振梁随温度变化的部分,补偿热激励硅基谐振型压力传感器的温度漂移。通过实验,研制出双梁结构的硅基谐振型压力传感器样品,初步测试结果显示,温度漂移的影响已降低到原来的1/30,大大提高了热激励硅基谐振型压力传感器的测试精度。 Aiming at the severe temperature drift of the heat-excited silicon-based resonant pressure sensor, a dual-beam silicon-based resonant pressure sensor structure is proposed. The resonant beam with untested pressure senses the change of the resonant beam, and is compared with the resonant beam with test pressure Reduce and eliminate the test pressure of the resonant beam with the temperature changes in the part of the compensation for thermally excited silicon-based resonant pressure sensor temperature drift. Through the experiment, the silicon-based resonant pressure sensor with double-beam structure has been developed. The preliminary test results show that the influence of temperature drift has been reduced to 1/30, which greatly improves the testing accuracy of thermally excited silicon-based resonant pressure sensor.