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用热丝法沉积金刚石膜，分离送入氢气和甲烷，可以减少钨丝碳化，提高功率利用率分送与混进相结合，可以制备晶体形态良好的金刚石膜到达基材表面的活性粒子的数量是提高金刚石膜生长速率的关键生长速率可达 ３．８μｍ／ｈ，均匀区面积达 ４００ｍｍ２
Deposition of diamond film with hot wire method, separated into the hydrogen and methane, can reduce the carbonization of tungsten, to improve power utilization rate distribution and mixed into the combination of the crystal morphology can be prepared to reach the substrate surface of the diamond film the number of active particles Is to increase the diamond growth rate of the key growth rate up to 3.8μm / h, uniform area of 400mm2