论文部分内容阅读
通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)系统上装配反射高能电子衍射仪 (RHEED) ,对外延GaN生长过程进行原位监测。通过分析研究RHEED图像确定衬底清洗、氮化、缓冲层生长、外延层生长的合适条件
In-situ monitoring of epitaxial GaN growth was performed by a self-made electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system equipped with a reflective high energy electron diffractometer (RHEED). The appropriate conditions for substrate cleaning, nitriding, buffer layer growth, and epitaxial layer growth were determined by analysis of RHEED images