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随着光纤通信技术的迅速发展,波长1.3～1.5微米范围内的长波长光纤通信系统,因具有低损耗、高传输速率、大容量,长距离等优点,而越来越受到用内外的重视.作为长波长光纤通信的光源器件LD、LED的研究在最近三、四年里也获得了很大的进展.国内近年来开始了GaInAsP四元系LED的研制工作.在LED的研制过程中,器件的光功率、光辐射率等参数的测量是必不可少的.为了能对LD和LED的这些参数进行方便、快速而精确的测量,我们研制了适用于长波长LED光功率等参数测量用的大面积锗光电二极管.本文就大光敏面锗光电二极管结构和研制工艺及结果分别予以介绍和讨论.
With the rapid development of optical fiber communication technology, long-wavelength optical fiber communication systems in the wavelength range of 1.3-1.5 micrometers have drawn more and more attention from both inside and outside due to their advantages of low loss, high transmission rate, large capacity and long distance. As a light source device for long-wavelength optical fiber communication, LD has also made great progress in the last three or four years .In recent years, the domestic research and development of GaInAsP quaternary system LED has started. In the development of LED, Of the optical power, optical emissivity and other parameters of the measurement is essential.In order to be able to LD and LED of these parameters for convenient, fast and accurate measurement, we developed for long-wavelength LED optical power and other parameters used to measure Large-area germanium photodiode.This paper describes and discusses the structure of the large-photoconductivity germanium photodiode and its development technology and results.