An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method.The band gap of the ZnS film is about 3.63 eV.Current-voltage(I-V)characteristics of the ZnS/Si heterojunction are examined and the results show the distinct rectifying characteristics with a tu-on voltage of about 1.8 V.The UV(330nm)and visible(450nm)photoresponse properties of the heterojunction are also investigated,which demonstrates the potential of such an n-ZnS/p-Si heterojunction for detecting both UV and visible light.