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针对智能手机功能集成度与功耗的矛盾,提出了一种适用于射频和基带的微型电源管理IC新架构,并基于MOS器件的亚阈值特性,详细地给出其中具有低功耗零温漂的电流基准及电压基准电路的设计。基于TSMC 0.25μm CMOS混合信号工艺,通过Cadence公司的Spectre软件进行仿真验证。结果表明,在-20℃~110℃范围温度内,基准源在工作电压为3.6 V时,可输出50 nA±0.25 nA的基准电流;当电源电压在0.8~4 V变化时,可提供稳定的0.671 V基准电压,其中在0℃~50℃的常温内,具有1.49×10-5/℃的温度系数;在0~100 kHz频率范围内,基准源的PSRR可达到-74 dB。
In view of the contradiction between functional integration and power consumption of smartphones, a new architecture of micro-power management IC for RF and baseband is proposed. Based on the sub-threshold characteristics of MOS devices, The current reference and voltage reference circuit design. Based on the TSMC 0.25μm CMOS mixed-signal process, simulation was performed using Spectre software from Cadence. The results show that a reference current of 50 nA ± 0.25 nA can be output at a reference voltage of 3.6 V at a temperature in the range of -20 ° C to 110 ° C. When the power supply voltage is varied from 0.8 to 4 V, a stable 0.671 V reference with a temperature coefficient of 1.49 × 10-5 / ° C at room temperature from 0 ° C to 50 ° C and PSRR of -74 dB from 0 to 100 kHz.