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对于GaAs电路来说,主要障碍在于集成度。虽然GaAs电路速度要比Si集成电路的快得多,但成本却很高。一个4英寸的Si片只需5～10美元,而一个3英寸的GaAs片却需200～300美元。如果把GaAs电路试做在Si衬底上,不仅Si衬底的强度好,导热性好,而且成本也大大下降,但是电路的速度变慢了。在Si衬底上生长GaAs薄膜的主要难题就是要把两种物质的不同的晶体结构合在一起。因此,现在科学家们正在研究。如果这个难题一旦解决, 那么速度既快,价格又便宜的GaAs集成电路
For GaAs circuits, the main obstacle is integration. Although GaAs circuits are much faster than Si integrated circuits, the cost is high. A 4-inch Si film only 5 to 10 dollars, while a 3-inch GaAs film but need 200 to 300 dollars. If GaAs circuit is tested on Si substrate, not only the Si substrate has good strength, good thermal conductivity, but also greatly reduces the cost, but the speed of the circuit is slowed down. The main challenge in growing GaAs films on Si substrates is to combine the different crystal structures of the two materials. So now scientists are researching. If this problem is solved once, then the speed is fast, cheaper GaAs IC